11th International Conference
“Carbon: Fundamental Problem,
Material Science, Technology”
29 May – 1 June 2018

Dear colleagues!

The Russian Public Organization of Specialists in the Field of Carbon and Carbon Materials “Carbon Society” and Technological Institute of Superhard and Novel Carbon Materials is pleased to invite scientists from around the world to participate in the 11th International Conference “Carbon: Fundamental Problem, Material Science, Technology” (CFPMST’2018) on 29 May – 1 June 2018 in Troitsk, Moscow, Russia.

We are going to combine leading scientists, students and manufacturer witch work at the field of carbon and superhard material, nanostructure growth, researching of the properties and application of carbon materials.

Looking forward you and your colleagues at the conference!

Prof. Vladimir D. Blank
President of the Carbon Society,
co-chairman of the CFPMST’2018 Organizing Committee,
director TISNUM

The main theme of conferense

  • research and development of carbon materials: science, technology, production;
  • diamonds and nanodiamonds;
  • carbon nanostructures;
  • composite materials;
  • sorption and catalytic properties of carbon and nanocarbon materials;
  • methods of synthesis of nanostructured carbon materials.

Invited speakers

Ray H. Baughman
The University of Texas at Dallas, USA

Anvar Zakhidov
The University of Texas at Dallas, USA
Advances in Carbon Nanotube Based charge collectors
for Optoelectronic devices


Albert Nasibulin
Skoltech, Russia

Elena Obraztsova
Prokhorov General Physics Institute, Russia
Optical and electro-physical properties
of films from filled single-walled
carbon nanotubes


Alexander Obraztsov
MSU, Russia
The preparation and application
of needle-shaped diamond nanocrystals


Yuri Shulga
ICP RAS, Russia
Printed technologies
for supercapacitors
(one of the applications
of graphene-based materials)


Yuri Palyanov
Sobolev Institute of Geology and Mineralogy
SB RAS, Russia
Crystallization of diamond
in magnesium-based systems


Igor Bubnenkov
The main steps
of silicon carbide formation mechanism
during liquid phase silicization
of carbon materials